block-type 200mw high power laser diode description the SLD302B is a high power laser diode mounted on a 3 3 5mm copper block. it is ideal for applications which require a minimal distance between the laser facet and external optical parts. features compact size 3 3 5mm block high power output po = 200mw hole for thermistor applications solid state laser excitation medical use structure gaalas double hetero-type laser diode operating lifetime mttf 10,000h (effective value) at po = 180mw, tc= 25? absolute maximum ratings (tc = 25?) optical power output pomax 200 mw recommended optical power output po 180 mw reverse voltage v r ld 2 v operating temperature topr ?0 to +50 ? storage temperature tstg ?0 to +85 ? warranty reliability assurance does not apply to this product. pin configuration ?1 e89104d19-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD302B no. 1 2 function ld cathode ld anode 2 ld anode 1 ld cathode m-261
2 SLD302B electrical and optical characteristics (tc = 25 c) item symbol conditions min. typ. max. unit threshold current operating current operating voltage wavelength radiation angle (f. w. h. m. ? ) positional accuracy differential efficiency ith iop vop p ? // ? x ? y, ? z ?? d p o = 180mw p o = 180mw p o = 180mw p o = 180mw p o = 180mw p o = 180mw 770 0.5 150 350 1.9 28 12 0.8 200 500 3.0 840 40 17 300 100 3 ma ma v nm degree m degree mw/ma perpendicular to junction parallel to junction position angle ? f. w. h. m. : full width at half maximum
3 SLD302B optical power output vs. forward current i f forward current [ma] po optical power output [mw] 0 250 500 0 100 200 tc = 0 c tc = 25 c tc = 50 c threshold current vs. temperature characteristics tc case temperature [ c] ith threshold current [ma] 100 1020304050 100 500 1000 power dependence of far field pattern angle [degree] radiation intensity (optional scale) 30 20 100 102030 tc = 25 c p o = 180mw p o = 90mw p o = 30mw power depecdence of near field pattern radiation intensity (optional scale) 50 m tc = 25 c p o = 180mw p o = 150mw p o = 100mw p o = 75mw p o = 50mw p o = 25mw oscillation wavelength vs. temperature characteristics tc case temperature [ c] p oscillation wavelength [nm] 100 1020304050 780 790 830 820 810 800 p o = 180mw tc = 10 c differential efficiency vs. temperature characteristics tc case temperature [ c] 10 0 50 40 30 20 10 0 0.5 1.0 1.5 d differential efficiency [mw/ma] (parallel to junction) example of representative characteristics
4 SLD302B power dependence of polarization ratio po optical power output [mw] 0 50 100 150 200 250 0 20 60 40 80 polarization ratio tc = 25 c 0.1 0.5 1.0 5.0 10 cod output [w] pulse width [ s] 0.1 1.0 5.0 0.5 10 50 100 duty = 10% t c = 23 c cw 0 1.0 3.0 2.0 1.5 0.5 2.5 po optical power output [w] optical power output vs. operating current iop operating current [a] 0 1.0 2.0 0.5 1.5 2.5 pulse width = 1 s duty = 10% tc = 23 c pulse cw pulse width dependence of cod ? power ? cod (catastrophic optical damage)
5 SLD302B wavelength [nm] 800 810 805 relative radiant intensity tc = 25 c po = 40mw wavelength [nm] 800 810 805 relative radiant intensity tc = 25 c po = 120mw wavelength [nm] 800 810 805 relative radiant intensity tc = 25 c po = 200mw wavelength [nm] 800 810 805 relative radiant intensity tc = 25 c po = 80mw wavelength [nm] 800 810 805 relative radiant intensity tc = 25 c po = 160mw power dependence of wavelength
6 SLD302B wavelength [nm] 805 825 815 relative radiant intensity tc = 6 c wavelength [nm] 805 825 815 relative radiant intensity tc = 12 c wavelength [nm] 805 825 815 relative radiant intensity tc = 23 c wavelength [nm] 805 825 815 relative radiant intensity tc = 35 c wavelength [nm] 805 825 815 relative radiant intensity tc = 45 c temperature dependence of wavelength (p o = 180mw)
7 SLD302B notes on operation care should be taken for the following points when using this product. (1) this product corresponds to a class 4 product under iec60825-1 and jis standard c6802 "laser product emission safety standards". (2) eye protection against laser beams take care not to allow laser beams to enter your eyes under any circumstances. for observing laser beams, always use safety goggles that block laser beams. usage of ir scopes, ir cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) gallium arsenide this product uses gallium arsenide (gaas). this is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. in addition, the following disposal methods are recommended when disposing of this product. 1. engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) prevention of surge current and electrostatic discharge laser diodes are most sensitive to electrostatic discharge among semiconductors. when a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. therefore, be extremely careful about overcurrent and electrostatic discharge. (5) use for special applications this product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. consult your sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. laser radiation avoid eye or skin exposure to direct or scattered radiation laser diode laser diode avoid exposure laser radiation is emitted from this aperture. this product complies with 21 cfr part 1040.10 and 1040.11 sony corporation 6-7-35 kitashinagawa, shinagawa-ku,tokyo 141-0001 japan maximum output over 1 w wavelength 600 - 950 nm class iv laser product
8 SLD302B package outline unit: mm m-261 sony code eiaj code jedec code package structure m-261 5.0 0.1 1.5 for thermistor 3.0 0.1 1.5 ld chip ceramic contact plate (ld cathode) body (ld anode) 1.0 1.5 0.2 0.3 1.7 1.8 0.2 3.0 0.1 package mass 1g sony corporation
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